Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DTC043TMT2L
Manufacturer Part Number | DTC043TMT2L |
---|---|
Future Part Number | FT-DTC043TMT2L |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DTC043TMT2L Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 5mA |
Current - Collector Cutoff (Max) | 500nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-723 |
Supplier Device Package | VMT3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DTC043TMT2L Weight | Contact Us |
Replacement Part Number | DTC043TMT2L-FT |
RN1106CT(TPL3)
Toshiba Semiconductor and Storage
RN1107ACT(TPL3)
Toshiba Semiconductor and Storage
RN1107CT(TPL3)
Toshiba Semiconductor and Storage
RN1108ACT(TPL3)
Toshiba Semiconductor and Storage
RN1108CT(TPL3)
Toshiba Semiconductor and Storage
RN1109ACT(TPL3)
Toshiba Semiconductor and Storage
RN1109CT(TPL3)
Toshiba Semiconductor and Storage
RN1110ACT(TPL3)
Toshiba Semiconductor and Storage
RN1110CT(TPL3)
Toshiba Semiconductor and Storage
RN1111ACT(TPL3)
Toshiba Semiconductor and Storage
AGLN010V5-UCG36
Microsemi Corporation
LFE2M100E-6F1152C
Lattice Semiconductor Corporation
AGL060V5-VQG100
Microsemi Corporation
10M25DCF484I7G
Intel
5SGXEB6R2F40C3
Intel
5SGXMA7H2F35C2LN
Intel
EP3SL150F1152C2
Intel
A1020B-PL44I
Microsemi Corporation
XC4VLX160-11FF1148C
Xilinx Inc.
EPF8452AQC160-3AC
Intel