Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / RN1108CT(TPL3)
Manufacturer Part Number | RN1108CT(TPL3) |
---|---|
Future Part Number | FT-RN1108CT(TPL3) |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RN1108CT(TPL3) Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 50mA |
Voltage - Collector Emitter Breakdown (Max) | 20V |
Resistor - Base (R1) | 22 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 50mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | CST3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN1108CT(TPL3) Weight | Contact Us |
Replacement Part Number | RN1108CT(TPL3)-FT |
RN1417(TE85L,F)
Toshiba Semiconductor and Storage
RN1418(TE85L,F)
Toshiba Semiconductor and Storage
RN1442ATE85LF
Toshiba Semiconductor and Storage
RN1444ATE85LF
Toshiba Semiconductor and Storage
RN2402S,LF
Toshiba Semiconductor and Storage
RN2402S,LF(D
Toshiba Semiconductor and Storage
RN2404TE85LF
Toshiba Semiconductor and Storage
RN2421(TE85L,F)
Toshiba Semiconductor and Storage
RN1104,LF(CT
Toshiba Semiconductor and Storage
RN1107,LF(CT
Toshiba Semiconductor and Storage
A3P600L-1FGG484I
Microsemi Corporation
APA075-PQG208A
Microsemi Corporation
A42MX16-VQ100A
Microsemi Corporation
5SGXEA5K3F35C3N
Intel
XC6VSX315T-1FFG1156C
Xilinx Inc.
LFEC15E-4F484C
Lattice Semiconductor Corporation
LFE2M35E-5F672I
Lattice Semiconductor Corporation
LFE2M50E-6FN484I
Lattice Semiconductor Corporation
EPF6016AQC208-3N
Intel
5SGSMD4H2F35C1N
Intel