Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / RN1109ACT(TPL3)
Manufacturer Part Number | RN1109ACT(TPL3) |
---|---|
Future Part Number | FT-RN1109ACT(TPL3) |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RN1109ACT(TPL3) Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 80mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | CST3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN1109ACT(TPL3) Weight | Contact Us |
Replacement Part Number | RN1109ACT(TPL3)-FT |
RN1418(TE85L,F)
Toshiba Semiconductor and Storage
RN1442ATE85LF
Toshiba Semiconductor and Storage
RN1444ATE85LF
Toshiba Semiconductor and Storage
RN2402S,LF
Toshiba Semiconductor and Storage
RN2402S,LF(D
Toshiba Semiconductor and Storage
RN2404TE85LF
Toshiba Semiconductor and Storage
RN2421(TE85L,F)
Toshiba Semiconductor and Storage
RN1104,LF(CT
Toshiba Semiconductor and Storage
RN1107,LF(CT
Toshiba Semiconductor and Storage
RN1102,LF(CT
Toshiba Semiconductor and Storage
XC7A35T-2CSG325I
Xilinx Inc.
10CX150YF672E6G
Intel
5SGSMD5H2F35I3LN
Intel
5SGXMA3K3F35I3N
Intel
5SGXMA4K3F35I3
Intel
XC2V4000-5FF1152I
Xilinx Inc.
LFE3-17EA-8LMG328I
Lattice Semiconductor Corporation
LFE2-20E-5F484C
Lattice Semiconductor Corporation
LCMXO2-4000HE-4BG256C
Lattice Semiconductor Corporation
EP2AGX260FF35I5G
Intel