Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / RN1107ACT(TPL3)
Manufacturer Part Number | RN1107ACT(TPL3) |
---|---|
Future Part Number | FT-RN1107ACT(TPL3) |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RN1107ACT(TPL3) Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 80mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | CST3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN1107ACT(TPL3) Weight | Contact Us |
Replacement Part Number | RN1107ACT(TPL3)-FT |
RN1406S,LF(D
Toshiba Semiconductor and Storage
RN1412TE85LF
Toshiba Semiconductor and Storage
RN1415(TE85L,F)
Toshiba Semiconductor and Storage
RN1417(TE85L,F)
Toshiba Semiconductor and Storage
RN1418(TE85L,F)
Toshiba Semiconductor and Storage
RN1442ATE85LF
Toshiba Semiconductor and Storage
RN1444ATE85LF
Toshiba Semiconductor and Storage
RN2402S,LF
Toshiba Semiconductor and Storage
RN2402S,LF(D
Toshiba Semiconductor and Storage
RN2404TE85LF
Toshiba Semiconductor and Storage
A3P1000-2FG484
Microsemi Corporation
M7A3P1000-1FGG484I
Microsemi Corporation
LFE2M100E-5FN1152I
Lattice Semiconductor Corporation
EP4CGX30CF23I7
Intel
EP3CLS100F484I7N
Intel
5SGXMA4K3F40I3N
Intel
EP3C5E144I7
Intel
XC6VHX380T-3FFG1155C
Xilinx Inc.
AGL060V5-CSG121I
Microsemi Corporation
LFXP6E-4QN208I
Lattice Semiconductor Corporation