Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DTC023YMT2L
Manufacturer Part Number | DTC023YMT2L |
---|---|
Future Part Number | FT-DTC023YMT2L |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DTC023YMT2L Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 5mA |
Current - Collector Cutoff (Max) | - |
Frequency - Transition | 250MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-723 |
Supplier Device Package | VMT3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DTC023YMT2L Weight | Contact Us |
Replacement Part Number | DTC023YMT2L-FT |
RN1104CT(TPL3)
Toshiba Semiconductor and Storage
RN1105ACT(TPL3)
Toshiba Semiconductor and Storage
RN1105CT(TPL3)
Toshiba Semiconductor and Storage
RN1106ACT(TPL3)
Toshiba Semiconductor and Storage
RN1106CT(TPL3)
Toshiba Semiconductor and Storage
RN1107ACT(TPL3)
Toshiba Semiconductor and Storage
RN1107CT(TPL3)
Toshiba Semiconductor and Storage
RN1108ACT(TPL3)
Toshiba Semiconductor and Storage
RN1108CT(TPL3)
Toshiba Semiconductor and Storage
RN1109ACT(TPL3)
Toshiba Semiconductor and Storage
LCMXO2-1200HC-6TG144IR1
Lattice Semiconductor Corporation
XC7A15T-1FTG256C
Xilinx Inc.
XC2VP2-6FGG256I
Xilinx Inc.
5SGSMD6K1F40C2LN
Intel
EP3SL200F1517C3
Intel
XC6VHX380T-1FFG1924I
Xilinx Inc.
XC4VFX100-10FF1152I
Xilinx Inc.
A3P060-1FGG144I
Microsemi Corporation
LCMXO256E-4M100I
Lattice Semiconductor Corporation
LFE3-70E-7FN672C
Lattice Semiconductor Corporation