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TPH2R306NH,L1Q Image

Toshiba Semiconductor and Storage TPH2R306NH,L1Q

MFG Part Number
TPH2R306NH,L1Q
Available Quantity
34670 Pieces
Reference Price
USD 1.0192
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
U-MOSVIII-H MOSFET N CH 60V 60A SOP ADV
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
TPH2R306NH,L1Q.pdf
TPH2R306NH,L1Q Image

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TPH2R306NH,L1Q Specifications

Manufacturer Part Number TPH2R306NH,L1Q
Future Part Number FT-TPH2R306NH,L1Q
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series U-MOSVIII-H
TPH2R306NH,L1Q Status (Lifecycle) In Stock
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6.5V, 10V
Rds On (Max) @ Id, Vgs 2.3 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6100pF @ 30V
FET Feature -
Power Dissipation (Max) 1.6W (Ta), 78W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOP Advance (5x5)
Package / Case 8-PowerVDFN
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
TPH2R306NH,L1Q Weight Contact Us
Replacement Part Number TPH2R306NH,L1Q-FT

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