Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / 2SJ360(TE12L,F)
Manufacturer Part Number | 2SJ360(TE12L,F) |
---|---|
Future Part Number | FT-2SJ360(TE12L,F) |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2SJ360(TE12L,F) Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
Rds On (Max) @ Id, Vgs | 730 mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 6.5nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 155pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 500mW (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PW-MINI |
Package / Case | TO-243AA |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2SJ360(TE12L,F) Weight | Contact Us |
Replacement Part Number | 2SJ360(TE12L,F)-FT |
2SK2962,T6WNLF(J
Toshiba Semiconductor and Storage
2SK2962,T6WNLF(M
Toshiba Semiconductor and Storage
2SK2989(T6CANO,A,F
Toshiba Semiconductor and Storage
2SK2989(T6CANO,F,M
Toshiba Semiconductor and Storage
2SK2989(TPE6,F,M)
Toshiba Semiconductor and Storage
2SK2989,F(J
Toshiba Semiconductor and Storage
2SK2989,T6F(J
Toshiba Semiconductor and Storage
2SK3670(F,M)
Toshiba Semiconductor and Storage
2SK3670(T6CANO,A,F
Toshiba Semiconductor and Storage
2SK3670(T6CANO,F,M
Toshiba Semiconductor and Storage