Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI8812DB-T2-E1
Manufacturer Part Number | SI8812DB-T2-E1 |
---|---|
Future Part Number | FT-SI8812DB-T2-E1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | TrenchFET® |
SI8812DB-T2-E1 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
Rds On (Max) @ Id, Vgs | 59 mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 8V |
Vgs (Max) | ±5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - |
Power Dissipation (Max) | 500mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-Microfoot |
Package / Case | 4-UFBGA |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI8812DB-T2-E1 Weight | Contact Us |
Replacement Part Number | SI8812DB-T2-E1-FT |
SIDR610DP-T1-GE3
Vishay Siliconix
SIDR622DP-T1-GE3
Vishay Siliconix
SIDR638DP-T1-GE3
Vishay Siliconix
SQS407ENW-T1_GE3
Vishay Siliconix
SQS411ENW-T1_GE3
Vishay Siliconix
SQS415ENW-T1_GE3
Vishay Siliconix
SQS460ENW-T1_GE3
Vishay Siliconix
SQS482ENW-T1_GE3
Vishay Siliconix
SQJ457EP-T1_GE3
Vishay Siliconix
SQJ431EP-T1_GE3
Vishay Siliconix
XC3S400-4TQG144C
Xilinx Inc.
XC2V1500-4FGG676I
Xilinx Inc.
APA450-BGG456
Microsemi Corporation
AGLN030V2-ZVQG100I
Microsemi Corporation
10M08SAU169A7G
Intel
5SGXEB5R3F43C3N
Intel
A42MX24-1TQG176
Microsemi Corporation
APA150-FGG144A
Microsemi Corporation
EP4SGX230DF29C3NES
Intel
EP20K1000CF33C7N
Intel