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Vishay Siliconix SIDR610DP-T1-GE3

Name: SIDR610DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIDR610DP-T1-GE3
Price: 1.53612 USD
Availability: InStock
Rating: 4.5 (373 reviews)

MFG Part Number: SIDR610DP-T1-GE3

Available Quantity: 23770 Pieces

Reference Price: USD 1.53612

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Vishay Siliconix

Brief Description: TrenchFET® MOSFET N-CHAN 200V PPAK SO-8DC

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: SIDR610DP-T1-GE3.pdf

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SIDR610DP-T1-GE3 Specifications

Manufacturer Part Number	SIDR610DP-T1-GE3
Future Part Number	FT-SIDR610DP-T1-GE3
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	TrenchFET®
SIDR610DP-T1-GE3 Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	8.9A (Ta), 39.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	31.9 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1380pF @ 100V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8DC
Package / Case	PowerPAK® SO-8
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
SIDR610DP-T1-GE3 Weight	Contact Us
Replacement Part Number	SIDR610DP-T1-GE3-FT

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