Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SQS411ENW-T1_GE3
Manufacturer Part Number | SQS411ENW-T1_GE3 |
---|---|
Future Part Number | FT-SQS411ENW-T1_GE3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101, TrenchFET® |
SQS411ENW-T1_GE3 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 27.3 mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3191pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 53.6W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® 1212-8W |
Package / Case | PowerPAK® 1212-8W |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SQS411ENW-T1_GE3 Weight | Contact Us |
Replacement Part Number | SQS411ENW-T1_GE3-FT |
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