Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI8808DB-T2-E1
Manufacturer Part Number | SI8808DB-T2-E1 |
---|---|
Future Part Number | FT-SI8808DB-T2-E1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | TrenchFET® |
SI8808DB-T2-E1 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 95 mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 8V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 15V |
FET Feature | - |
Power Dissipation (Max) | 500mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-Microfoot |
Package / Case | 4-UFBGA |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI8808DB-T2-E1 Weight | Contact Us |
Replacement Part Number | SI8808DB-T2-E1-FT |
SIDR140DP-T1-GE3
Vishay Siliconix
SIDR390DP-T1-GE3
Vishay Siliconix
SIDR392DP-T1-GE3
Vishay Siliconix
SIDR680DP-T1-GE3
Vishay Siliconix
SIDR402DP-T1-GE3
Vishay Siliconix
SIDR610DP-T1-GE3
Vishay Siliconix
SIDR622DP-T1-GE3
Vishay Siliconix
SIDR638DP-T1-GE3
Vishay Siliconix
SQS407ENW-T1_GE3
Vishay Siliconix
SQS411ENW-T1_GE3
Vishay Siliconix
XCV200-5FG256I
Xilinx Inc.
APA150-FGG256
Microsemi Corporation
M7A3P1000-FGG256I
Microsemi Corporation
A40MX04-1PL68
Microsemi Corporation
EP1M350F780C6
Intel
LCMXO2-2000HE-6FTG256C
Lattice Semiconductor Corporation
LFXP2-40E-6FN484I
Lattice Semiconductor Corporation
10AX066H1F34I1SG
Intel
EP1C6Q240C7N
Intel
EP1K100QC208-1GZ
Intel