Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI8489EDB-T2-E1
Manufacturer Part Number | SI8489EDB-T2-E1 |
---|---|
Future Part Number | FT-SI8489EDB-T2-E1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | TrenchFET® |
SI8489EDB-T2-E1 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
Rds On (Max) @ Id, Vgs | 44 mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 765pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 780mW (Ta), 1.8W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-Microfoot |
Package / Case | 4-UFBGA |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI8489EDB-T2-E1 Weight | Contact Us |
Replacement Part Number | SI8489EDB-T2-E1-FT |
SIDR402DP-T1-GE3
Vishay Siliconix
SIDR610DP-T1-GE3
Vishay Siliconix
SIDR622DP-T1-GE3
Vishay Siliconix
SIDR638DP-T1-GE3
Vishay Siliconix
SQS407ENW-T1_GE3
Vishay Siliconix
SQS411ENW-T1_GE3
Vishay Siliconix
SQS415ENW-T1_GE3
Vishay Siliconix
SQS460ENW-T1_GE3
Vishay Siliconix
SQS482ENW-T1_GE3
Vishay Siliconix
SQJ457EP-T1_GE3
Vishay Siliconix
A3P015-1QNG68
Microsemi Corporation
5SGXMA7N1F40C2N
Intel
5SGXEA7N1F45I2N
Intel
5SGXMB5R1F43C1N
Intel
EP4CGX15BF14I7N
Intel
XC6VLX195T-1FFG784I
Xilinx Inc.
XC2VP7-6FF672I
Xilinx Inc.
LFE3-150EA-6FN1156I
Lattice Semiconductor Corporation
LCMXO2-4000HC-4FG484I
Lattice Semiconductor Corporation
EP4SGX70HF35I3N
Intel