Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI8469DB-T2-E1
Manufacturer Part Number | SI8469DB-T2-E1 |
---|---|
Future Part Number | FT-SI8469DB-T2-E1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | TrenchFET® |
SI8469DB-T2-E1 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 8V |
Current - Continuous Drain (Id) @ 25°C | 4.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
Rds On (Max) @ Id, Vgs | 64 mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id | 800mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V |
Vgs (Max) | ±5V |
Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 4V |
FET Feature | - |
Power Dissipation (Max) | 780mW (Ta), 1.8W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-Microfoot |
Package / Case | 4-UFBGA |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI8469DB-T2-E1 Weight | Contact Us |
Replacement Part Number | SI8469DB-T2-E1-FT |
SIDR392DP-T1-GE3
Vishay Siliconix
SIDR680DP-T1-GE3
Vishay Siliconix
SIDR402DP-T1-GE3
Vishay Siliconix
SIDR610DP-T1-GE3
Vishay Siliconix
SIDR622DP-T1-GE3
Vishay Siliconix
SIDR638DP-T1-GE3
Vishay Siliconix
SQS407ENW-T1_GE3
Vishay Siliconix
SQS411ENW-T1_GE3
Vishay Siliconix
SQS415ENW-T1_GE3
Vishay Siliconix
SQS460ENW-T1_GE3
Vishay Siliconix
EP20K100ETC144-1N
Intel
LFXP3C-3T100I
Lattice Semiconductor Corporation
XC2S100-5PQ208I
Xilinx Inc.
A3PE600-PQG208
Microsemi Corporation
10AX027E4F29I3SG
Intel
5SEE9H40C2LN
Intel
A40MX04-PL84I
Microsemi Corporation
ICE40UL1K-CM36AITR
Lattice Semiconductor Corporation
LFXP15C-3FN256I
Lattice Semiconductor Corporation
LFE3-95EA-6LFN672C
Lattice Semiconductor Corporation