Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / RN4981,LF(CT
Manufacturer Part Number | RN4981,LF(CT |
---|---|
Future Part Number | FT-RN4981,LF(CT |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RN4981,LF(CT Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100µA (ICBO) |
Frequency - Transition | 250MHz, 200MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN4981,LF(CT Weight | Contact Us |
Replacement Part Number | RN4981,LF(CT-FT |
RN2903FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2904FE,LF
Toshiba Semiconductor and Storage
RN2907FE,LF(CT
Toshiba Semiconductor and Storage
RN2908FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2909FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2910FE,LF(CT
Toshiba Semiconductor and Storage
RN4902FE,LF(CT
Toshiba Semiconductor and Storage
RN4905FE,LF(CT
Toshiba Semiconductor and Storage
RN4906FE,LF(CT
Toshiba Semiconductor and Storage
RN4907FE,LF(CT
Toshiba Semiconductor and Storage
XC4010E-1BG225C
Xilinx Inc.
A3P030-1VQG100I
Microsemi Corporation
M1AGL250V2-VQ100I
Microsemi Corporation
10CL120ZF484I8G
Intel
10M16DAF484C7G
Intel
5SGSED8K2F40I2N
Intel
5SGXEA3K3F40I4N
Intel
XC7VX690T-3FFG1158E
Xilinx Inc.
XC6SLX4-2CSG225C
Xilinx Inc.
LCMXO640C-3M132C
Lattice Semiconductor Corporation