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RN2910FE,LF(CT Image

Toshiba Semiconductor and Storage RN2910FE,LF(CT

MFG Part Number
RN2910FE,LF(CT
Available Quantity
77510 Pieces
Reference Price
USD 0.021424
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
- TRANS 2PNP PREBIAS 0.1W ES6
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
RN2910FE,LF(CT.pdf
RN2910FE,LF(CT Image

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RN2910FE,LF(CT Specifications

Manufacturer Part Number RN2910FE,LF(CT
Future Part Number FT-RN2910FE,LF(CT
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series -
RN2910FE,LF(CT Status (Lifecycle) In Stock
Part Status Active
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) -
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 200MHz
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
RN2910FE,LF(CT Weight Contact Us
Replacement Part Number RN2910FE,LF(CT-FT

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