Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / RN2904FE,LF
Manufacturer Part Number | RN2904FE,LF |
---|---|
Future Part Number | FT-RN2904FE,LF |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RN2904FE,LF Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 200MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2904FE,LF Weight | Contact Us |
Replacement Part Number | RN2904FE,LF-FT |
RN1606(TE85L,F)
Toshiba Semiconductor and Storage
RN1607(TE85L,F)
Toshiba Semiconductor and Storage
RN1611(TE85L,F)
Toshiba Semiconductor and Storage
RN2601(TE85L,F)
Toshiba Semiconductor and Storage
RN2603(TE85L,F)
Toshiba Semiconductor and Storage
RN2604(TE85L,F)
Toshiba Semiconductor and Storage
RN4606(TE85L,F)
Toshiba Semiconductor and Storage
RN4610(TE85L,F)
Toshiba Semiconductor and Storage
RN4611(TE85L,F)
Toshiba Semiconductor and Storage
RN4605(TE85L,F)
Toshiba Semiconductor and Storage
A42MX16-2PQG100I
Microsemi Corporation
EP2S30F484I4N
Intel
5SGXEA7N3F40I4N
Intel
5SGSED6K2F40C3N
Intel
A1020B-2PL44I
Microsemi Corporation
XC7A75T-1CS324I
Xilinx Inc.
LFE2-12E-5F484I
Lattice Semiconductor Corporation
LCMXO2-7000HE-4BG256C
Lattice Semiconductor Corporation
EP1C20F400C8N
Intel
EP1SGX40DF1020C7N
Intel