Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / RN2110CT(TPL3)
Manufacturer Part Number | RN2110CT(TPL3) |
---|---|
Future Part Number | FT-RN2110CT(TPL3) |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RN2110CT(TPL3) Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 50mA |
Voltage - Collector Emitter Breakdown (Max) | 20V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | - |
Power - Max | 50mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | CST3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2110CT(TPL3) Weight | Contact Us |
Replacement Part Number | RN2110CT(TPL3)-FT |
RN2114(TE85L,F)
Toshiba Semiconductor and Storage
RN2115,LF(CT
Toshiba Semiconductor and Storage
RN2116,LF(CT
Toshiba Semiconductor and Storage
RN1102T5LFT
Toshiba Semiconductor and Storage
RN1104T5LFT
Toshiba Semiconductor and Storage
RN1108(T5L,F,T)
Toshiba Semiconductor and Storage
RN1109(T5L,F,T)
Toshiba Semiconductor and Storage
RN1110(T5L,F,T)
Toshiba Semiconductor and Storage
RN1112(T5L,F,T)
Toshiba Semiconductor and Storage
RN1114(T5L,F,T)
Toshiba Semiconductor and Storage