Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / RN2115,LF(CT
Manufacturer Part Number | RN2115,LF(CT |
---|---|
Future Part Number | FT-RN2115,LF(CT |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RN2115,LF(CT Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 200MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SC-75, SOT-416 |
Supplier Device Package | SSM |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2115,LF(CT Weight | Contact Us |
Replacement Part Number | RN2115,LF(CT-FT |
BCR148WE6327BTSA1
Infineon Technologies
BCR148WH6327XTSA1
Infineon Technologies
BCR158WE6327HTSA1
Infineon Technologies
BCR158WH6327XTSA1
Infineon Technologies
BCR166WE6327HTSA1
Infineon Technologies
BCR166WH6327XTSA1
Infineon Technologies
BCR169WE6327HTSA1
Infineon Technologies
BCR169WH6327XTSA1
Infineon Technologies
BCR183WE6327HTSA1
Infineon Technologies
BCR183WH6327XTSA1
Infineon Technologies
M2GL050T-1FCSG325
Microsemi Corporation
A54SX32A-1CQ208
Microsemi Corporation
AT40K10-2CQI
Microchip Technology
XC4008E-1PC84C
Xilinx Inc.
XA6SLX9-3CSG225Q
Xilinx Inc.
XC7S25-L1CSGA324I
Xilinx Inc.
AFS1500-2FGG676
Microsemi Corporation
LFE2-20E-6FN256I
Lattice Semiconductor Corporation
LCMXO2-4000HE-5BG256C
Lattice Semiconductor Corporation
5AGXMA5G4F35C4N
Intel