Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / RN1109(T5L,F,T)
Manufacturer Part Number | RN1109(T5L,F,T) |
---|---|
Future Part Number | FT-RN1109(T5L,F,T) |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RN1109(T5L,F,T) Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 250MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SC-75, SOT-416 |
Supplier Device Package | SSM |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN1109(T5L,F,T) Weight | Contact Us |
Replacement Part Number | RN1109(T5L,F,T)-FT |
BCR166WH6327XTSA1
Infineon Technologies
BCR169WE6327HTSA1
Infineon Technologies
BCR169WH6327XTSA1
Infineon Technologies
BCR183WE6327HTSA1
Infineon Technologies
BCR183WH6327XTSA1
Infineon Technologies
BCR185WE6327BTSA1
Infineon Technologies
BCR185WH6327XTSA1
Infineon Technologies
BCR191WE6327HTSA1
Infineon Technologies
BCR191WH6327XTSA1
Infineon Technologies
BCR192WE6327HTSA1
Infineon Technologies
AGLN020V2-CSG81I
Microsemi Corporation
A54SX32A-1FGG256
Microsemi Corporation
LFE5UM-85F-7BG554I
Lattice Semiconductor Corporation
EP1K100FC256-2N
Intel
5SGXMBBR3H43I3LN
Intel
5SGXEA5H2F35I3L
Intel
XA7A50T-1CPG236Q
Xilinx Inc.
LFXP2-17E-5FTN256I
Lattice Semiconductor Corporation
LFEC3E-4QN208I
Lattice Semiconductor Corporation
EP2SGX30DF780C5
Intel