Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / PDTA114TMB,315
Manufacturer Part Number | PDTA114TMB,315 |
---|---|
Future Part Number | FT-PDTA114TMB,315 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
PDTA114TMB,315 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 1µA |
Frequency - Transition | 180MHz |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | 3-XFDFN |
Supplier Device Package | DFN1006B-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
PDTA114TMB,315 Weight | Contact Us |
Replacement Part Number | PDTA114TMB,315-FT |
NSVDTA143EM3T5G
ON Semiconductor
NSVDTC143ZM3T5G
ON Semiconductor
NSVDTC144EM3T5G
ON Semiconductor
NSVDTA114YM3T5G
ON Semiconductor
NSVDTA123EM3T5G
ON Semiconductor
NSVDTC114YM3T5G
ON Semiconductor
NSVDTC144TM3T5G
ON Semiconductor
NSB9435T1G
ON Semiconductor
NSV9435T1G
ON Semiconductor
PDTA113EM,315
Nexperia USA Inc.
A40MX02-FVQG80
Microsemi Corporation
LFEC3E-3T144C
Lattice Semiconductor Corporation
XC6SLX9-2FTG256I
Xilinx Inc.
XC3SD1800A-4FG676C
Xilinx Inc.
10M25SCE144A7G
Intel
5SGXEA3K2F35I2LN
Intel
XC7VX690T-L2FFG1157E
Xilinx Inc.
XA7A100T-1CSG324I
Xilinx Inc.
5AGXBA7D4F35I5N
Intel
EP20K200EBC356-2N
Intel