Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / NSB9435T1G
Manufacturer Part Number | NSB9435T1G |
---|---|
Future Part Number | FT-NSB9435T1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NSB9435T1G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 3A |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 800mA, 1V |
Vce Saturation (Max) @ Ib, Ic | 550mV @ 300mA, 3A |
Current - Collector Cutoff (Max) | - |
Frequency - Transition | 110MHz |
Power - Max | 720mW |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Supplier Device Package | SOT-223 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSB9435T1G Weight | Contact Us |
Replacement Part Number | NSB9435T1G-FT |
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