Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / PDTA113EM,315
Manufacturer Part Number | PDTA113EM,315 |
---|---|
Future Part Number | FT-PDTA113EM,315 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
PDTA113EM,315 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 1 kOhms |
Resistor - Emitter Base (R2) | 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 40mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 1.5mA, 30mA |
Current - Collector Cutoff (Max) | 1µA |
Frequency - Transition | - |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | DFN1006-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
PDTA113EM,315 Weight | Contact Us |
Replacement Part Number | PDTA113EM,315-FT |
SMUN5214T1G
ON Semiconductor
SMUN5215T1G
ON Semiconductor
SMUN5232T1G
ON Semiconductor
MUN5113T1
ON Semiconductor
MUN5114T1
ON Semiconductor
MUN5115T1
ON Semiconductor
MUN5116T1
ON Semiconductor
MUN5131T1
ON Semiconductor
MUN5135T1
ON Semiconductor
MUN5136T1
ON Semiconductor
A3P600L-1FGG484I
Microsemi Corporation
APA075-PQG208A
Microsemi Corporation
A42MX16-VQ100A
Microsemi Corporation
5SGXEA5K3F35C3N
Intel
XC6VSX315T-1FFG1156C
Xilinx Inc.
LFEC15E-4F484C
Lattice Semiconductor Corporation
LFE2M35E-5F672I
Lattice Semiconductor Corporation
LFE2M50E-6FN484I
Lattice Semiconductor Corporation
EPF6016AQC208-3N
Intel
5SGSMD4H2F35C1N
Intel