Home / Products / Integrated Circuits (ICs) / Memory / M24C08-DRMN3TP/K
Manufacturer Part Number | M24C08-DRMN3TP/K |
---|---|
Future Part Number | FT-M24C08-DRMN3TP/K |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q100 |
M24C08-DRMN3TP/K Status (Lifecycle) | In Stock |
Part Status | Active |
Memory Type | Non-Volatile |
Memory Format | EEPROM |
Technology | EEPROM |
Memory Size | 8Kb (1K x 8) |
Clock Frequency | 1MHz |
Write Cycle Time - Word, Page | 4ms |
Access Time | 450ns |
Memory Interface | I²C |
Voltage - Supply | 1.7V ~ 5.5V |
Operating Temperature | -40°C ~ 125°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
M24C08-DRMN3TP/K Weight | Contact Us |
Replacement Part Number | M24C08-DRMN3TP/K-FT |
TC58BVG0S3HBAI6
Toshiba Memory America, Inc.
TC58BVG1S3HBAI6
Toshiba Memory America, Inc.
TC58NVG1S3HBAI6
Toshiba Memory America, Inc.
TC58NYG0S3HBAI6
Toshiba Memory America, Inc.
TC58NYG2S0HBAI6
Toshiba Memory America, Inc.
TC58BYG0S3HBAI6
Toshiba Memory America, Inc.
TC58NVG0S3HBAI6
Toshiba Memory America, Inc.
TC58NVG2S0HBAI6
Toshiba Memory America, Inc.
TC58BYG2S0HBAI6
Toshiba Memory America, Inc.
TH58BYG2S3HBAI6
Toshiba Memory America, Inc.
XC4006E-3TQ144C
Xilinx Inc.
XC6SLX150T-N3FGG900C
Xilinx Inc.
LFE3-17EA-6FTN256I
Lattice Semiconductor Corporation
10M08DCF484I7G
Intel
EP3CLS150F484C8
Intel
EP4CE115F23C7
Intel
XC2VP20-6FFG1152I
Xilinx Inc.
LCMXO2-4000HE-6BG256I
Lattice Semiconductor Corporation
10AX027E2F27E1HG
Intel
EP4SGX360HF35I3N
Intel