Home / Products / Integrated Circuits (ICs) / Memory / TC58BVG1S3HBAI6
Manufacturer Part Number | TC58BVG1S3HBAI6 |
---|---|
Future Part Number | FT-TC58BVG1S3HBAI6 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Benand™ |
TC58BVG1S3HBAI6 Status (Lifecycle) | In Stock |
Part Status | Active |
Memory Type | Non-Volatile |
Memory Format | FLASH |
Technology | FLASH - NAND (SLC) |
Memory Size | 2Gb (256M x 8) |
Clock Frequency | - |
Write Cycle Time - Word, Page | 25ns |
Access Time | 25ns |
Memory Interface | Parallel |
Voltage - Supply | 2.7V ~ 3.6V |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 67-VFBGA |
Supplier Device Package | 67-VFBGA (6.5x8) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TC58BVG1S3HBAI6 Weight | Contact Us |
Replacement Part Number | TC58BVG1S3HBAI6-FT |
W25Q256FVCJQ TR
Winbond Electronics
W25Q32FVTCIG
Winbond Electronics
W25Q32FVTCIG TR
Winbond Electronics
W25Q32FVTCIP
Winbond Electronics
W25Q32FVTCIP TR
Winbond Electronics
W25Q32FVTCJF
Winbond Electronics
W25Q32FVTCJF TR
Winbond Electronics
W25Q32FVTCJQ
Winbond Electronics
W25Q32FVTCJQ TR
Winbond Electronics
W25Q64FVTCIF
Winbond Electronics
XCKU035-1FBVA676I
Xilinx Inc.
XC3S100E-4VQ100C
Xilinx Inc.
M2GL090TS-1FCSG325I
Microsemi Corporation
A3PE3000-2FGG484I
Microsemi Corporation
A3PN030-Z1QNG48I
Microsemi Corporation
M1A3P250-2PQG208
Microsemi Corporation
EP4CE10F17A7N
Intel
EPF10K30EFC256-3
Intel
LFE2-20E-5F484C
Lattice Semiconductor Corporation
EP20K100EFC324-1
Intel