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Toshiba Memory America, Inc. TC58BYG2S0HBAI6

MFG Part Number
TC58BYG2S0HBAI6
Available Quantity
72580 Pieces
Reference Price
USD 4.104
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Toshiba Memory America, Inc.
Brief Description
Benand™ IC FLASH 4G PARALLEL 67VFBGA
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Memory
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
TC58BYG2S0HBAI6.pdf
TC58BYG2S0HBAI6 Image

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TC58BYG2S0HBAI6 Specifications

Manufacturer Part Number TC58BYG2S0HBAI6
Future Part Number FT-TC58BYG2S0HBAI6
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series Benand™
TC58BYG2S0HBAI6 Status (Lifecycle) In Stock
Part Status Active
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (SLC)
Memory Size 4Gb (512M x 8)
Clock Frequency -
Write Cycle Time - Word, Page 25ns
Access Time 25ns
Memory Interface Parallel
Voltage - Supply 1.7V ~ 1.95V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 67-VFBGA
Supplier Device Package 67-VFBGA (6.5x8)
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
TC58BYG2S0HBAI6 Weight Contact Us
Replacement Part Number TC58BYG2S0HBAI6-FT

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