Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPB80N06S208ATMA1
Manufacturer Part Number | IPB80N06S208ATMA1 |
---|---|
Future Part Number | FT-IPB80N06S208ATMA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | OptiMOS™ |
IPB80N06S208ATMA1 Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 7.7 mOhm @ 58A, 10V |
Vgs(th) (Max) @ Id | 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 96nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2860pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 215W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3-2 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPB80N06S208ATMA1 Weight | Contact Us |
Replacement Part Number | IPB80N06S208ATMA1-FT |
IPB45N06S3-16
Infineon Technologies
IPB45N06S3L-13
Infineon Technologies
IPB45N06S409ATMA1
Infineon Technologies
IPB45N06S409ATMA2
Infineon Technologies
IPB45N06S4L08ATMA1
Infineon Technologies
IPB45P03P4L11ATMA1
Infineon Technologies
IPB47N10S33ATMA1
Infineon Technologies
IPB47N10SL26ATMA1
Infineon Technologies
IPB50CN10NGATMA1
Infineon Technologies
IPB50N10S3L16ATMA1
Infineon Technologies
M2GL050-1FG484
Microsemi Corporation
ICE5LP4K-CM36ITR50
Lattice Semiconductor Corporation
AGL250V5-VQG100I
Microsemi Corporation
5SGXMA4H3F35I3LN
Intel
XC5VLX50-2FF324I
Xilinx Inc.
XC7VX690T-2FFG1157I
Xilinx Inc.
XC2VP2-6FF672C
Xilinx Inc.
LFE3-95EA-9FN1156C
Lattice Semiconductor Corporation
EP3SL110F780I4LN
Intel
EP1C20F324C8N
Intel