Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPB45N06S409ATMA2
Manufacturer Part Number | IPB45N06S409ATMA2 |
---|---|
Future Part Number | FT-IPB45N06S409ATMA2 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101, OptiMOS™ |
IPB45N06S409ATMA2 Status (Lifecycle) | In Stock |
Part Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 9.4 mOhm @ 45A, 10V |
Vgs(th) (Max) @ Id | 4V @ 34µA |
Gate Charge (Qg) (Max) @ Vgs | 47nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3785pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 71W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3-2 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPB45N06S409ATMA2 Weight | Contact Us |
Replacement Part Number | IPB45N06S409ATMA2-FT |
IPB052N04NGATMA1
Infineon Technologies
IPB055N03LGATMA1
Infineon Technologies
IPB057N06NATMA1
Infineon Technologies
IPB05CN10N G
Infineon Technologies
IPB05N03LA
Infineon Technologies
IPB05N03LA G
Infineon Technologies
IPB05N03LAT
Infineon Technologies
IPB05N03LB
Infineon Technologies
IPB05N03LB G
Infineon Technologies
IPB065N06L G
Infineon Technologies
EX128-TQ100
Microsemi Corporation
XC3S50A-4VQG100I
Xilinx Inc.
A54SX32A-1CQ256
Microsemi Corporation
A3P1000-PQ208
Microsemi Corporation
A42MX16-VQG100M
Microsemi Corporation
EP1SGX10CF672C7N
Intel
10AX016C3U19I2LG
Intel
10CL025ZE144I8G
Intel
5SGXEA7H3F35I4
Intel
EP3SE50F780I3
Intel