Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPB47N10S33ATMA1
Manufacturer Part Number | IPB47N10S33ATMA1 |
---|---|
Future Part Number | FT-IPB47N10S33ATMA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | SIPMOS® |
IPB47N10S33ATMA1 Status (Lifecycle) | In Stock |
Part Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 33 mOhm @ 33A, 10V |
Vgs(th) (Max) @ Id | 4V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs | 105nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2500pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 175W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3-2 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPB47N10S33ATMA1 Weight | Contact Us |
Replacement Part Number | IPB47N10S33ATMA1-FT |
IPB05CN10N G
Infineon Technologies
IPB05N03LA
Infineon Technologies
IPB05N03LA G
Infineon Technologies
IPB05N03LAT
Infineon Technologies
IPB05N03LB
Infineon Technologies
IPB05N03LB G
Infineon Technologies
IPB065N06L G
Infineon Technologies
IPB065N10N3GATMA1
Infineon Technologies
IPB06CN10N G
Infineon Technologies
IPB06N03LA
Infineon Technologies