Home / Products / Discrete Semiconductor Products / Diodes - RF / HSMS-2818-TR1G
Manufacturer Part Number | HSMS-2818-TR1G |
---|---|
Future Part Number | FT-HSMS-2818-TR1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
HSMS-2818-TR1G Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Diode Type | Schottky - 1 Bridge |
Voltage - Peak Reverse (Max) | 20V |
Current - Max | 1A |
Capacitance @ Vr, F | 1.2pF @ 0V, 1MHz |
Resistance @ If, F | 15 Ohm @ 5mA, 1MHz |
Power Dissipation (Max) | - |
Operating Temperature | 150°C (TJ) |
Package / Case | TO-253-4, TO-253AA |
Supplier Device Package | SOT-143-4 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
HSMS-2818-TR1G Weight | Contact Us |
Replacement Part Number | HSMS-2818-TR1G-FT |
BAR8802LRHE6327XTSA1
Infineon Technologies
BAR8902LRHE6327XTSA1
Infineon Technologies
BAR8902LRHE6433XTMA1
Infineon Technologies
BAR9002ELSE6327XTSA1
Infineon Technologies
BAR9002LRHE6327XTSA1
Infineon Technologies
BAT1502LRHE6327XTSA1
Infineon Technologies
BAT6202LE6327XTMA1
Infineon Technologies
BAT 62-09S E6327
Infineon Technologies
BAT 68-08S E6327
Infineon Technologies
BAR8802VH6327XTSA1
Infineon Technologies
A3P030-1QNG68
Microsemi Corporation
XC2V250-5FGG256I
Xilinx Inc.
XC6SLX75T-3FG676I
Xilinx Inc.
XC3S1600E-5FG484C
Xilinx Inc.
XC7A75T-3FGG484E
Xilinx Inc.
M1AFS1500-FGG484I
Microsemi Corporation
5SGXEA7N3F40C2
Intel
XC7A200T-2FB676I
Xilinx Inc.
XC7K325T-L2FFG676E
Xilinx Inc.
EP4SGX110FF35C4N
Intel