Home / Products / Discrete Semiconductor Products / Diodes - RF / BAR9002LRHE6327XTSA1
Manufacturer Part Number | BAR9002LRHE6327XTSA1 |
---|---|
Future Part Number | FT-BAR9002LRHE6327XTSA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BAR9002LRHE6327XTSA1 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Diode Type | PIN - Single |
Voltage - Peak Reverse (Max) | 80V |
Current - Max | 100mA |
Capacitance @ Vr, F | 0.35pF @ 1V, 1MHz |
Resistance @ If, F | 800 mOhm @ 10mA, 100MHz |
Power Dissipation (Max) | 250mW |
Operating Temperature | 150°C (TJ) |
Package / Case | SOD-882 |
Supplier Device Package | PG-TSLP-2 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BAR9002LRHE6327XTSA1 Weight | Contact Us |
Replacement Part Number | BAR9002LRHE6327XTSA1-FT |
LFXP6C-4TN144C
Lattice Semiconductor Corporation
XC4VFX140-10FF1517C
Xilinx Inc.
M1A3P400-FGG256I
Microsemi Corporation
A40MX02-1PLG68I
Microsemi Corporation
5SGXMA7N3F40I3LN
Intel
EP4SE360H29C4N
Intel
XC5VFX30T-1FFG665C
Xilinx Inc.
AX1000-2FGG676
Microsemi Corporation
5CEBA2U19C7N
Intel
EPF10K100EBC356-1B
Intel