Home / Products / Discrete Semiconductor Products / Diodes - RF / BAR9002ELSE6327XTSA1
Manufacturer Part Number | BAR9002ELSE6327XTSA1 |
---|---|
Future Part Number | FT-BAR9002ELSE6327XTSA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BAR9002ELSE6327XTSA1 Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | PIN - Single |
Voltage - Peak Reverse (Max) | 80V |
Current - Max | 100mA |
Capacitance @ Vr, F | 0.35pF @ 1V, 1MHz |
Resistance @ If, F | 800 mOhm @ 10mA, 100MHz |
Power Dissipation (Max) | 250mW |
Operating Temperature | 150°C (TJ) |
Package / Case | 0201 (0603 Metric) |
Supplier Device Package | PG-TSSLP-2-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BAR9002ELSE6327XTSA1 Weight | Contact Us |
Replacement Part Number | BAR9002ELSE6327XTSA1-FT |
AGLE3000V5-FGG484
Microsemi Corporation
A40MX02-FPL68
Microsemi Corporation
5SGSED8N2F45I2
Intel
EP4CGX15BF14I7
Intel
XC5VSX35T-1FFG665C
Xilinx Inc.
A42MX24-PLG84
Microsemi Corporation
A42MX09-FPQ100
Microsemi Corporation
A42MX16-1PQG100
Microsemi Corporation
LCMXO3L-4300C-6BG256I
Lattice Semiconductor Corporation
LCMXO3LF-1300C-6BG256C
Lattice Semiconductor Corporation