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Infineon Technologies BSC159N10LSFGATMA1

Name: BSC159N10LSFGATMA1
Brand: Infineon Technologies
SKU: BSC159N10LSFGATMA1
Price: 0.876072 USD
Availability: InStock
Rating: 4.6 (727 reviews)

MFG Part Number: BSC159N10LSFGATMA1

Available Quantity: 88520 Pieces

Reference Price: USD 0.876072

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: OptiMOS™ MOSFET N-CH 100V 63A TDSON-8

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: BSC159N10LSFGATMA1.pdf

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BSC159N10LSFGATMA1 Specifications

Manufacturer Part Number	BSC159N10LSFGATMA1
Future Part Number	FT-BSC159N10LSFGATMA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	OptiMOS™
BSC159N10LSFGATMA1 Status (Lifecycle)	In Stock
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	9.4A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	15.9 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.4V @ 72µA
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2500pF @ 50V
FET Feature	-
Power Dissipation (Max)	114W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8
Package / Case	8-PowerTDFN
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
BSC159N10LSFGATMA1 Weight	Contact Us
Replacement Part Number	BSC159N10LSFGATMA1-FT

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