Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BSC022N04LSATMA1
Manufacturer Part Number | BSC022N04LSATMA1 |
---|---|
Future Part Number | FT-BSC022N04LSATMA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | OptiMOS™ |
BSC022N04LSATMA1 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 2.2 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 37nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 69W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TDSON-8 |
Package / Case | 8-PowerTDFN |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSC022N04LSATMA1 Weight | Contact Us |
Replacement Part Number | BSC022N04LSATMA1-FT |
BSC030P03NS3GAUMA1
Infineon Technologies
BSC020N03LSGATMA1
Infineon Technologies
BSC039N06NSATMA1
Infineon Technologies
BSC050NE2LSATMA1
Infineon Technologies
BSZ035N03MSGATMA1
Infineon Technologies
BSC040N10NS5ATMA1
Infineon Technologies
BSC160N10NS3GATMA1
Infineon Technologies
BSZ440N10NS3GATMA1
Infineon Technologies
IPC50N04S55R8ATMA1
Infineon Technologies
IRFH7440TRPBF
Infineon Technologies
A3PE600-2FGG484I
Microsemi Corporation
M1A3P600-2PQ208
Microsemi Corporation
LFE3-35EA-8LFTN256C
Lattice Semiconductor Corporation
AGLN060V5-ZVQ100
Microsemi Corporation
10M25DAF256C7G
Intel
EP3SE260F1152I3
Intel
LCMXO640C-4M100C
Lattice Semiconductor Corporation
EP3SE110F780C2
Intel
10AX048E2F29I1HG
Intel
EP20K60EQC208-1
Intel