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Infineon Technologies BSC018NE2LSIATMA1

Name: BSC018NE2LSIATMA1
Brand: Infineon Technologies
SKU: BSC018NE2LSIATMA1
Price: 0.46816 USD
Availability: InStock
Rating: 4.6 (758 reviews)

MFG Part Number: BSC018NE2LSIATMA1

Available Quantity: 31920 Pieces

Reference Price: USD 0.46816

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: OptiMOS™ MOSFET N-CH 25V 29A TDSON-8

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: BSC018NE2LSIATMA1.pdf

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BSC018NE2LSIATMA1 Specifications

Manufacturer Part Number	BSC018NE2LSIATMA1
Future Part Number	FT-BSC018NE2LSIATMA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	OptiMOS™
BSC018NE2LSIATMA1 Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	29A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.8 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2500pF @ 12V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8
Package / Case	8-PowerTDFN
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
BSC018NE2LSIATMA1 Weight	Contact Us
Replacement Part Number	BSC018NE2LSIATMA1-FT

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