Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / BCR133SB6327XT
Manufacturer Part Number | BCR133SB6327XT |
---|---|
Future Part Number | FT-BCR133SB6327XT |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BCR133SB6327XT Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | - |
Frequency - Transition | 130MHz |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package | PG-SOT363-6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BCR133SB6327XT Weight | Contact Us |
Replacement Part Number | BCR133SB6327XT-FT |
PEMB9,315
Nexperia USA Inc.
PEMD10,115
Nexperia USA Inc.
PEMD12,115
Nexperia USA Inc.
PEMD12,315
Nexperia USA Inc.
PEMD13,115
Nexperia USA Inc.
PEMD14,115
Nexperia USA Inc.
PEMD15,115
Nexperia USA Inc.
PEMD17,115
Nexperia USA Inc.
PEMD18,115
Nexperia USA Inc.
PEMD19,115
Nexperia USA Inc.
XC6SLX16-3FT256I
Xilinx Inc.
XCKU035-2FBVA676E
Xilinx Inc.
M1A3P1000-2FGG484I
Microsemi Corporation
AGLN030V2-ZQNG48I
Microsemi Corporation
EPF10K30AFC256-2N
Intel
5SGXMA5H2F35C2N
Intel
5SGXMA5K3F35C2N
Intel
EP3SE80F1152I4
Intel
LFE3-95E-8FN484C
Lattice Semiconductor Corporation
EP2SGX60DF780C5N
Intel