Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / PEMD12,315
Manufacturer Part Number | PEMD12,315 |
---|---|
Future Part Number | FT-PEMD12,315 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
PEMD12,315 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 1µA |
Frequency - Transition | - |
Power - Max | 300mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-666 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
PEMD12,315 Weight | Contact Us |
Replacement Part Number | PEMD12,315-FT |
SMUN5235DW1T1G
ON Semiconductor
MUN5116DW1T1G
ON Semiconductor
MUN5132DW1T1G
ON Semiconductor
MUN5136DW1T1G
ON Semiconductor
MUN5312DW1T2G
ON Semiconductor
MUN5316DW1T1G
ON Semiconductor
NSB4904DW1T1G
ON Semiconductor
NSVMUN5113DW1T3G
ON Semiconductor
NSVMUN5133DW1T1G
ON Semiconductor
NSVMUN5137DW1T1G
ON Semiconductor
LCMXO1200C-3T144I
Lattice Semiconductor Corporation
AX125-FG256
Microsemi Corporation
5CGXFC9D6F27C7N
Intel
5SGXEA7N2F40C1
Intel
5SGXEA7H1F35I2N
Intel
XC5VLX50T-1FF665C
Xilinx Inc.
XC7K355T-1FF901I
Xilinx Inc.
LFE2M20SE-6F256C
Lattice Semiconductor Corporation
5CEFA5M13C8N
Intel
EP2A40F1020C8
Intel