Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / PEMD10,115
Manufacturer Part Number | PEMD10,115 |
---|---|
Future Part Number | FT-PEMD10,115 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
PEMD10,115 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 1µA |
Frequency - Transition | - |
Power - Max | 300mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-666 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
PEMD10,115 Weight | Contact Us |
Replacement Part Number | PEMD10,115-FT |
NSVMUN5333DW1T3G
ON Semiconductor
SMUN5213DW1T1G
ON Semiconductor
SMUN5235DW1T1G
ON Semiconductor
MUN5116DW1T1G
ON Semiconductor
MUN5132DW1T1G
ON Semiconductor
MUN5136DW1T1G
ON Semiconductor
MUN5312DW1T2G
ON Semiconductor
MUN5316DW1T1G
ON Semiconductor
NSB4904DW1T1G
ON Semiconductor
NSVMUN5113DW1T3G
ON Semiconductor
XC6SLX16-3FT256I
Xilinx Inc.
XCKU035-2FBVA676E
Xilinx Inc.
M1A3P1000-2FGG484I
Microsemi Corporation
AGLN030V2-ZQNG48I
Microsemi Corporation
EPF10K30AFC256-2N
Intel
5SGXMA5H2F35C2N
Intel
5SGXMA5K3F35C2N
Intel
EP3SE80F1152I4
Intel
LFE3-95E-8FN484C
Lattice Semiconductor Corporation
EP2SGX60DF780C5N
Intel