Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2SD2695(T6CNO,A,F)
Manufacturer Part Number | 2SD2695(T6CNO,A,F) |
---|---|
Future Part Number | FT-2SD2695(T6CNO,A,F) |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2SD2695(T6CNO,A,F) Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 2A |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 1A |
Current - Collector Cutoff (Max) | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 1A, 2V |
Power - Max | 900mW |
Frequency - Transition | 100MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 Long Body |
Supplier Device Package | TO-92MOD |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2SD2695(T6CNO,A,F) Weight | Contact Us |
Replacement Part Number | 2SD2695(T6CNO,A,F)-FT |
2SA965-Y,T6F(J
Toshiba Semiconductor and Storage
2SA965-Y,T6KOJPF(J
Toshiba Semiconductor and Storage
2SB1457(T6CANO,F,M
Toshiba Semiconductor and Storage
2SB1457(T6CNO,A,F)
Toshiba Semiconductor and Storage
2SB1457(T6DW,F,M)
Toshiba Semiconductor and Storage
2SB1457(TE6,F,M)
Toshiba Semiconductor and Storage
2SB1457,T6TOTOF(J
Toshiba Semiconductor and Storage
2SB1457,T6YMEF(M
Toshiba Semiconductor and Storage
2SC1627A-O,PASF(M
Toshiba Semiconductor and Storage
2SC1627A-Y,PASF(M
Toshiba Semiconductor and Storage
LCMXO2-1200ZE-2TG100I
Lattice Semiconductor Corporation
EX64-TQG100
Microsemi Corporation
EP3C55U484C7N
Intel
5SGXEA9N3F45I4N
Intel
AGL600V5-FG144I
Microsemi Corporation
LCMXO2280E-4FT324C
Lattice Semiconductor Corporation
LFE3-95E-8FN672C
Lattice Semiconductor Corporation
LCMXO2-4000HE-5MG132I
Lattice Semiconductor Corporation
EP2AGX45DF29C5
Intel
EP2S130F1020C3
Intel