Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2SB1457(T6CNO,A,F)
Manufacturer Part Number | 2SB1457(T6CNO,A,F) |
---|---|
Future Part Number | FT-2SB1457(T6CNO,A,F) |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2SB1457(T6CNO,A,F) Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 2A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 1A |
Current - Collector Cutoff (Max) | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 1A, 2V |
Power - Max | 900mW |
Frequency - Transition | 50MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 Long Body |
Supplier Device Package | TO-92MOD |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2SB1457(T6CNO,A,F) Weight | Contact Us |
Replacement Part Number | 2SB1457(T6CNO,A,F)-FT |
BC857CWH6327XTSA1
Infineon Technologies
BC857CWH6433XTMA1
Infineon Technologies
BC858BWE6327HTSA1
Infineon Technologies
BC858BWH6327XTSA1
Infineon Technologies
BC858CWE6327BTSA1
Infineon Technologies
BC858CWH6327XTSA1
Infineon Technologies
BC860BWE6327HTSA1
Infineon Technologies
BC860BWH6327XTSA1
Infineon Technologies
BC860CWE6327HTSA1
Infineon Technologies
BC860CWH6327XTSA1
Infineon Technologies
LCMXO2-2000HE-5TG144C
Lattice Semiconductor Corporation
XA3S1600E-4FGG484I
Xilinx Inc.
M2GL005-1VF400I
Microsemi Corporation
LCMXO640E-3FTN256C
Lattice Semiconductor Corporation
EP3SE50F484C2
Intel
EP4CE6E22C8N
Intel
LFE2-50E-5F672I
Lattice Semiconductor Corporation
LCMXO2280E-4FTN324I
Lattice Semiconductor Corporation
5AGXMB3G6F35C6N
Intel
EP4CE30F29I7N
Intel