Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2SA965-Y,T6F(J
Manufacturer Part Number | 2SA965-Y,T6F(J |
---|---|
Future Part Number | FT-2SA965-Y,T6F(J |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2SA965-Y,T6F(J Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 800mA |
Voltage - Collector Emitter Breakdown (Max) | 120V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 100mA, 5V |
Power - Max | 900mW |
Frequency - Transition | 120MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 Long Body |
Supplier Device Package | LSTM |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2SA965-Y,T6F(J Weight | Contact Us |
Replacement Part Number | 2SA965-Y,T6F(J-FT |
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