Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2SD2206(TE6,F,M)
Manufacturer Part Number | 2SD2206(TE6,F,M) |
---|---|
Future Part Number | FT-2SD2206(TE6,F,M) |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2SD2206(TE6,F,M) Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 2A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 1A |
Current - Collector Cutoff (Max) | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 1A, 2V |
Power - Max | 900mW |
Frequency - Transition | 100MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 Long Body |
Supplier Device Package | TO-92MOD |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2SD2206(TE6,F,M) Weight | Contact Us |
Replacement Part Number | 2SD2206(TE6,F,M)-FT |
2SA965-O,F(J
Toshiba Semiconductor and Storage
2SA965-Y(F,M)
Toshiba Semiconductor and Storage
2SA965-Y(T6CANO,FM
Toshiba Semiconductor and Storage
2SA965-Y,F(J
Toshiba Semiconductor and Storage
2SA965-Y,SWFF(M
Toshiba Semiconductor and Storage
2SA965-Y,T6F(J
Toshiba Semiconductor and Storage
2SA965-Y,T6KOJPF(J
Toshiba Semiconductor and Storage
2SB1457(T6CANO,F,M
Toshiba Semiconductor and Storage
2SB1457(T6CNO,A,F)
Toshiba Semiconductor and Storage
2SB1457(T6DW,F,M)
Toshiba Semiconductor and Storage
A54SX16A-1TQG144
Microsemi Corporation
LCMXO2280E-4TN100I
Lattice Semiconductor Corporation
XC2VP7-6FG456I
Xilinx Inc.
ICE40UL1K-SWG16ITR1K
Lattice Semiconductor Corporation
5SGXEB6R2F40C3N
Intel
5SGXMB6R2F40I2N
Intel
5SGSMD4E2H29I2LN
Intel
XC4010XL-3PC84I
Xilinx Inc.
A54SX32A-FGG144M
Microsemi Corporation
EP2S90F1020I4
Intel