Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / 1N5811US/TR
Manufacturer Part Number | 1N5811US/TR |
---|---|
Future Part Number | FT-1N5811US/TR |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
1N5811US/TR Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 150V |
Current - Average Rectified (Io) | 3A |
Voltage - Forward (Vf) (Max) @ If | 875mV @ 4A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 30ns |
Current - Reverse Leakage @ Vr | 5µA @ 150V |
Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | SQ-MELF, B |
Supplier Device Package | B, SQ-MELF |
Operating Temperature - Junction | -65°C ~ 175°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
1N5811US/TR Weight | Contact Us |
Replacement Part Number | 1N5811US/TR-FT |
JAN1N5187
Microsemi Corporation
JAN1N5188
Microsemi Corporation
JAN1N5190
Microsemi Corporation
JAN1N5415
Microsemi Corporation
JAN1N5415US
Microsemi Corporation
JAN1N5417US
Microsemi Corporation
JAN1N5418
Microsemi Corporation
JAN1N5418US
Microsemi Corporation
JAN1N5419US
Microsemi Corporation
JAN1N5420US
Microsemi Corporation
LCMXO2-2000ZE-2TG144C
Lattice Semiconductor Corporation
XC7A75T-2FTG256I
Xilinx Inc.
M2GL025-1VFG400I
Microsemi Corporation
5SGXEA7N3F45C4N
Intel
XC7A200T-L1FB484I
Xilinx Inc.
XCKU3P-1SFVB784I
Xilinx Inc.
A3P600-2FGG144I
Microsemi Corporation
LCMXO2-4000HE-4MG184I
Lattice Semiconductor Corporation
EP2AGX260FF35I3
Intel
EP20K100EQC208-2XN
Intel