Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / JAN1N5188
Manufacturer Part Number | JAN1N5188 |
---|---|
Future Part Number | FT-JAN1N5188 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/424 |
JAN1N5188 Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 400V |
Current - Average Rectified (Io) | 3A |
Voltage - Forward (Vf) (Max) @ If | 1.5V @ 9A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 250ns |
Current - Reverse Leakage @ Vr | 2µA @ 400V |
Capacitance @ Vr, F | - |
Mounting Type | Through Hole |
Package / Case | B, Axial |
Supplier Device Package | Axial |
Operating Temperature - Junction | -65°C ~ 175°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JAN1N5188 Weight | Contact Us |
Replacement Part Number | JAN1N5188-FT |
VSSAF515HM3/H
Vishay Semiconductor Diodes Division
VSSAF515HM3/I
Vishay Semiconductor Diodes Division
VSSAF56HM3_A/I
Vishay Semiconductor Diodes Division
VSSAF5L45HM3_A/H
Vishay Semiconductor Diodes Division
VSSAF5L45HM3_A/I
Vishay Semiconductor Diodes Division
VSSAF5M10-M3/I
Vishay Semiconductor Diodes Division
VSSAF5M10HM3/H
Vishay Semiconductor Diodes Division
VSSAF5M10HM3/I
Vishay Semiconductor Diodes Division
VSSAF5M12-M3/H
Vishay Semiconductor Diodes Division
VSSAF5M12-M3/I
Vishay Semiconductor Diodes Division
A54SX16A-1TQ144I
Microsemi Corporation
XC7A75T-3FGG484E
Xilinx Inc.
M1A3P1000L-1FGG484I
Microsemi Corporation
APA1000-CQ352M
Microsemi Corporation
EP2C8F256C8N
Intel
5SGXEBBR1H43C2L
Intel
XC2V2000-4FFG896C
Xilinx Inc.
LCMXO256E-4M100C
Lattice Semiconductor Corporation
EP1S10F780C6
Intel
EP4SGX110HF35I3
Intel