Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / JAN1N5187
Manufacturer Part Number | JAN1N5187 |
---|---|
Future Part Number | FT-JAN1N5187 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/424 |
JAN1N5187 Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 200V |
Current - Average Rectified (Io) | 3A |
Voltage - Forward (Vf) (Max) @ If | 1.5V @ 9A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 200ns |
Current - Reverse Leakage @ Vr | 2µA @ 200V |
Capacitance @ Vr, F | - |
Mounting Type | Through Hole |
Package / Case | B, Axial |
Supplier Device Package | Axial |
Operating Temperature - Junction | -65°C ~ 175°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JAN1N5187 Weight | Contact Us |
Replacement Part Number | JAN1N5187-FT |
VSSAF515-M3/I
Vishay Semiconductor Diodes Division
VSSAF515HM3/H
Vishay Semiconductor Diodes Division
VSSAF515HM3/I
Vishay Semiconductor Diodes Division
VSSAF56HM3_A/I
Vishay Semiconductor Diodes Division
VSSAF5L45HM3_A/H
Vishay Semiconductor Diodes Division
VSSAF5L45HM3_A/I
Vishay Semiconductor Diodes Division
VSSAF5M10-M3/I
Vishay Semiconductor Diodes Division
VSSAF5M10HM3/H
Vishay Semiconductor Diodes Division
VSSAF5M10HM3/I
Vishay Semiconductor Diodes Division
VSSAF5M12-M3/H
Vishay Semiconductor Diodes Division
XC7S25-1FTGB196C
Xilinx Inc.
APA075-PQ208I
Microsemi Corporation
EP2S60F484I4N
Intel
10M25SAE144C8G
Intel
XC4008E-1PC84C
Xilinx Inc.
XC7VX980T-1FFG1930I
Xilinx Inc.
A54SX16A-TQG100
Microsemi Corporation
LCMXO3LF-1300E-6MG121I
Lattice Semiconductor Corporation
10AX115R2F40E2SG
Intel
EPF10K30ABC356-4
Intel