Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / 1N5623US
Manufacturer Part Number | 1N5623US |
---|---|
Future Part Number | FT-1N5623US |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
1N5623US Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 1000V |
Current - Average Rectified (Io) | 1A |
Voltage - Forward (Vf) (Max) @ If | 1.6V @ 3A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 500ns |
Current - Reverse Leakage @ Vr | 500nA @ 1000V |
Capacitance @ Vr, F | 15pF @ 12V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | SQ-MELF, A |
Supplier Device Package | D-5A |
Operating Temperature - Junction | -65°C ~ 175°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
1N5623US Weight | Contact Us |
Replacement Part Number | 1N5623US-FT |
JAN1N3646
Microsemi Corporation
JAN1N4944
Microsemi Corporation
JAN1N5187
Microsemi Corporation
JAN1N5188
Microsemi Corporation
JAN1N5190
Microsemi Corporation
JAN1N5415
Microsemi Corporation
JAN1N5415US
Microsemi Corporation
JAN1N5417US
Microsemi Corporation
JAN1N5418
Microsemi Corporation
JAN1N5418US
Microsemi Corporation
LCMXO2-4000ZE-3TG144C
Lattice Semiconductor Corporation
XC6SLX150-N3FG676I
Xilinx Inc.
APA600-PQG208I
Microsemi Corporation
EP1S10F484C5N
Intel
EP1S10F484C6
Intel
A54SX32A-TQ100M
Microsemi Corporation
LCMXO1200E-3M132I
Lattice Semiconductor Corporation
10AX090U3F45I2LG
Intel
5CGXFC4C6M13C7N
Intel
EP3C55F780C7
Intel