Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / 1N5622US
Manufacturer Part Number | 1N5622US |
---|---|
Future Part Number | FT-1N5622US |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
1N5622US Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 1000V |
Current - Average Rectified (Io) | 1A |
Voltage - Forward (Vf) (Max) @ If | 1.3V @ 3A |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 2µs |
Current - Reverse Leakage @ Vr | 500nA @ 1000V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | SQ-MELF, A |
Supplier Device Package | D-5A |
Operating Temperature - Junction | -65°C ~ 200°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
1N5622US Weight | Contact Us |
Replacement Part Number | 1N5622US-FT |
JAN1N3595UR-1
Microsemi Corporation
JAN1N3646
Microsemi Corporation
JAN1N4944
Microsemi Corporation
JAN1N5187
Microsemi Corporation
JAN1N5188
Microsemi Corporation
JAN1N5190
Microsemi Corporation
JAN1N5415
Microsemi Corporation
JAN1N5415US
Microsemi Corporation
JAN1N5417US
Microsemi Corporation
JAN1N5418
Microsemi Corporation
LCMXO2280E-3TN100I
Lattice Semiconductor Corporation
M2GL090-FCSG325I
Microsemi Corporation
LCMXO2280E-3FT256C
Lattice Semiconductor Corporation
LFE5U-85F-6BG756I
Lattice Semiconductor Corporation
5SGXEA7N2F40I3LN
Intel
5SGXEA5H2F35I3
Intel
XC7A15T-3CPG236E
Xilinx Inc.
5AGXFB1H6F35C6N
Intel
EP1S80B956C6N
Intel
EP4SGX180HF35C4
Intel