Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / VS-GB100NH120N
Manufacturer Part Number | VS-GB100NH120N |
---|---|
Future Part Number | FT-VS-GB100NH120N |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
VS-GB100NH120N Status (Lifecycle) | In Stock |
Part Status | Active |
IGBT Type | - |
Configuration | Single |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 200A |
Power - Max | 833W |
Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 100A |
Current - Collector Cutoff (Max) | 5mA |
Input Capacitance (Cies) @ Vce | 8.58nF @ 25V |
Input | Standard |
NTC Thermistor | No |
Operating Temperature | 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Double INT-A-PAK (3 + 4) |
Supplier Device Package | Double INT-A-PAK |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
VS-GB100NH120N Weight | Contact Us |
Replacement Part Number | VS-GB100NH120N-FT |
FP35R12KT4B16BOSA1
Infineon Technologies
FP40R12KE3BOSA1
Infineon Technologies
FP40R12KE3GBOSA1
Infineon Technologies
FP50R06KE3BOSA1
Infineon Technologies
FP50R07N2E4BOSA1
Infineon Technologies
FP50R12KS4CBOSA1
Infineon Technologies
FP50R12KT4B16BOSA1
Infineon Technologies
FP50R12KT4GB15BOSA1
Infineon Technologies
FP50R12KT4PBPSA1
Infineon Technologies
FP50R12N2T4B16BOSA1
Infineon Technologies
A54SX16A-TQ144M
Microsemi Corporation
XC7K70T-2FBG676I
Xilinx Inc.
XC3S200-5VQ100C
Xilinx Inc.
M7AFS600-2FG484
Microsemi Corporation
EP4CE40U19I7N
Intel
EPF10K50SFC256-1N
Intel
10CL006ZE144I8G
Intel
5SGXEBBR3H43C2LN
Intel
A42MX16-PQ160M
Microsemi Corporation
LFEC33E-4F484C
Lattice Semiconductor Corporation