Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / FP50R07N2E4BOSA1
Manufacturer Part Number | FP50R07N2E4BOSA1 |
---|---|
Future Part Number | FT-FP50R07N2E4BOSA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
FP50R07N2E4BOSA1 Status (Lifecycle) | In Stock |
Part Status | Active |
IGBT Type | Trench Field Stop |
Configuration | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 70A |
Power - Max | - |
Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 50A |
Current - Collector Cutoff (Max) | 1mA |
Input Capacitance (Cies) @ Vce | 3.1nF @ 25V |
Input | Standard |
NTC Thermistor | Yes |
Operating Temperature | -40°C ~ 150°C |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | Module |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FP50R07N2E4BOSA1 Weight | Contact Us |
Replacement Part Number | FP50R07N2E4BOSA1-FT |
GHIS060A120S-A2
Global Power Technologies Group
GHIS080A120S-A1
Global Power Technologies Group
GHIS080A120S-A2
Global Power Technologies Group
GHIS030A120S-A1
Global Power Technologies Group
GSID100A120S5C1
Global Power Technologies Group
GSID150A120S5C1
Global Power Technologies Group
GSID300A120S5C1
Global Power Technologies Group
GSID200A120S5C1
Global Power Technologies Group
GSID300A125S5C1
Global Power Technologies Group
GHIS080A060S1-E1
Global Power Technologies Group
XC4006E-2TQ144C
Xilinx Inc.
A3P1000L-FGG484I
Microsemi Corporation
A54SX32A-2PQG208
Microsemi Corporation
M1AGL250V5-VQG100
Microsemi Corporation
5SGXEA5N1F40C2N
Intel
10AX022E3F29I2SG
Intel
A54SX32A-2TQ100I
Microsemi Corporation
LCMXO640C-3M100I
Lattice Semiconductor Corporation
10AX048E1F29I1HG
Intel
EP1SGX25FF1020C5
Intel