Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / VS-10ETS12STRR-M3
Manufacturer Part Number | VS-10ETS12STRR-M3 |
---|---|
Future Part Number | FT-VS-10ETS12STRR-M3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
VS-10ETS12STRR-M3 Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 1200V |
Current - Average Rectified (Io) | 10A |
Voltage - Forward (Vf) (Max) @ If | 1.1V @ 10A |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 50µA @ 1200V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | D2PAK |
Operating Temperature - Junction | -40°C ~ 150°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
VS-10ETS12STRR-M3 Weight | Contact Us |
Replacement Part Number | VS-10ETS12STRR-M3-FT |
VBT3080S-E3/4W
Vishay Semiconductor Diodes Division
VBT3080S-M3/4W
Vishay Semiconductor Diodes Division
VBT3080S-M3/8W
Vishay Semiconductor Diodes Division
VBT4045BP-M3/4W
Vishay Semiconductor Diodes Division
VBT4045BP-M3/8W
Vishay Semiconductor Diodes Division
VBT5200-E3/4W
Vishay Semiconductor Diodes Division
VBT5200-E3/8W
Vishay Semiconductor Diodes Division
VBT5202-M3/4W
Vishay Semiconductor Diodes Division
VBT760-E3/4W
Vishay Semiconductor Diodes Division
VBT760-E3/8W
Vishay Semiconductor Diodes Division
A40MX04-VQ80A
Microsemi Corporation
XC2VP30-5FGG676C
Xilinx Inc.
APA750-BG456I
Microsemi Corporation
AFS250-FGG256
Microsemi Corporation
AGLN125V5-VQ100I
Microsemi Corporation
5SGSED8N2F45I3LN
Intel
EP3SE80F1152C3N
Intel
10AX057K3F35E2LG
Intel
EP1S40F780I6
Intel
EP1SGX40GF1020C6
Intel