Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / VBT5202-M3/4W
Manufacturer Part Number | VBT5202-M3/4W |
---|---|
Future Part Number | FT-VBT5202-M3/4W |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | TMBS® |
VBT5202-M3/4W Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 200V |
Current - Average Rectified (Io) | 5A |
Voltage - Forward (Vf) (Max) @ If | 880mV @ 5A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 150µA @ 200V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | TO-263AB |
Operating Temperature - Junction | -40°C ~ 175°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
VBT5202-M3/4W Weight | Contact Us |
Replacement Part Number | VBT5202-M3/4W-FT |
NSB8GTHE3_A/I
Vishay Semiconductor Diodes Division
NSB8GTHE3_A/P
Vishay Semiconductor Diodes Division
NSB8JTHE3_A/I
Vishay Semiconductor Diodes Division
NSB8JTHE3_A/P
Vishay Semiconductor Diodes Division
NSB8KTHE3_A/I
Vishay Semiconductor Diodes Division
NSB8KTHE3_A/P
Vishay Semiconductor Diodes Division
NSB8MTHE3_A/I
Vishay Semiconductor Diodes Division
NSB8MTHE3_A/P
Vishay Semiconductor Diodes Division
SBLB10L25HE3_A/I
Vishay Semiconductor Diodes Division
SBLB10L25HE3_A/P
Vishay Semiconductor Diodes Division
LCMXO2280E-3TN100I
Lattice Semiconductor Corporation
M2GL090-FCSG325I
Microsemi Corporation
LCMXO2280E-3FT256C
Lattice Semiconductor Corporation
LFE5U-85F-6BG756I
Lattice Semiconductor Corporation
5SGXEA7N2F40I3LN
Intel
5SGXEA5H2F35I3
Intel
XC7A15T-3CPG236E
Xilinx Inc.
5AGXFB1H6F35C6N
Intel
EP1S80B956C6N
Intel
EP4SGX180HF35C4
Intel